Third-Party Validation
Independent validation of RFO effects on semiconductor performance by external laboratories.
Independent Third-Party Validation Raspberry Pi 4 Model B Rev 1.5 devices | 4× Cortex-A72
validation conducted by Brad Flaugher, Independent Consultant and former CTO at Inoxoft
This report presents independent third-party testing of Resonant Field Optimization (RFO) technology on a Raspberry Pi 4 Model B. Testing was conducted on August 18-19, 2025, comparing baseline "stock no shield" configuration against RFO-treated configuration under controlled stress testing conditions. Results demonstrate measurable improvements in thermal management and computational performance.
Test Protocol: 5-minute stress-ng CPU stress test (4 workers) | Stock firmware, no overclocking
Device 1 (Control): Never exposed to RFO, tested August 19, 2025 at 15:22 BST
Device 2 (RFO): Pre-treated with RFO technology, tested August 18, 2025 at 19:31 BST
Key Findings
RFO treatment demonstrated consistent improvements across all measured parameters, with particularly significant gains in thermal headroom and sustained performance under load.
Test Methodology
- Control Device: Raspberry Pi 4B never exposed to RFO technology (baseline performance)
- RFO Device: Separate Raspberry Pi 4B pre-treated with RFO technology
- Test Protocol: Identical stress-ng CPU workload for 300 seconds on each device
- Firmware: Stock configuration, no overclocking, standard thermal management
- Data Collection: Temperature, frequency, and throttle status logged at 5-second intervals
- Performance Metric: Bogo operations completed during test period
Quantitative Results
| Metric | Stock (No Shield) | RFO Treated | Improvement |
|---|---|---|---|
| Average Temperature | 80.9°C | 78.4°C | −2.5°C (3.1%) |
| Peak Temperature | 84.7°C | 84.7°C | No change |
| Average CPU Frequency | 1686 MHz | 1721 MHz | +35 MHz (2.1%) |
| Time to First Throttle | 80 seconds | 121 seconds | +41 sec (51.3%) |
| Time Spent Throttled | 71.9% | 59.6% | −12.3 pp |
| Bogo Operations | 113,374 | 117,345 | +3,971 (3.5%) |
| Bogo Ops/Second | 377.87 | 391.03 | +13.16 (3.5%) |
Technical Analysis
Thermal Behavior
- Initial Response: RFO system started 5.8°C cooler (40.4°C vs 46.2°C) despite similar ambient conditions
- Heating Rate: More gradual temperature increase with RFO, reaching 80°C at 121s vs 80s for stock
- Steady State: Both systems stabilized around 83-84°C, but RFO maintained this with higher frequency output
- Thermal Efficiency: RFO achieved 2.1% higher frequency at 3.1% lower average temperature
Throttling Characteristics
- Stock Configuration: Experienced both SOFT_TEMP_LIMIT and ARM_FREQ_CAPPED events
- RFO Treatment: Only SOFT_TEMP_LIMIT throttling observed, no hard frequency capping
- Frequency Stability: RFO maintained frequencies above 1500 MHz for longer periods
- Recovery Behavior: RFO showed faster recovery to higher frequencies after throttling events
Performance Impact
- Sustained Throughput: 3.5% improvement in total computational work completed
- Efficiency Metric: 98.16 vs 94.94 bogo ops per CPU second (3.4% improvement)
- Real-time Performance: 391.03 vs 377.87 bogo ops per real second
3rd Party Validation: June 17, 2025
Validated by Priscilla Kapel (Pratt Institute)
Third-Party Test Summary
Test Date: June 17, 2025 | Treatment Date: June 12, 2025 (5 days persistence)
Test Configuration: +5V with 10Ω load resistor | Ambient Temperature: 21.4°C
Key Results:
- Average Temperature Reduction: 5.5°C
- VDS Reduction: 62% average (0.35V vs 0.73V)
- Power Consumption: 2.81W
- Treatment Persistence: Effects maintained after 5 days
Temperature Comparison Over Time
Key Finding: RFO-treated device maintained consistently lower temperatures throughout the 30-minute test period
Peak Temperature Differential: 7.6°C at 16 minutes
VDS (Drain-Source Voltage) Measurements
Key Finding: RFO treatment resulted in significantly lower VDS values, indicating improved conduction efficiency
Average Improvement: 62% reduction in drain-source voltage drop
Temperature Differential and VDS Trends
Analysis: Temperature differential increased over time, with VDS measurements showing consistent improvement
Implication: RFO effects remain stable and potentially improve with operational time
3rd Party Validation - Independent Thermal Tests - June 12, 2025
Validated by Dan Snazelle (Snazzy Electronics)
3rd Party Test Overview
Independent third-party thermal test results validate RFO effectiveness across multiple MOSFET types:
- 2N7000 MOSFET - Small-signal N-channel enhancement mode field-effect transistor
- IRF540 MOSFET - Power N-channel enhancement mode field-effect transistor
Test Configuration: Source to ground, Gate to 5V, Drain through >10Ω resistor to 5V
Key Finding: All tests showed consistent temperature reduction in RFO-treated devices, with effects ranging from 2.5°C to 6°C lower temperatures compared to control samples.
2N7000 MOSFET - 3rd Party Thermal Test
- Test Duration: 18 minutes
- Max Temperature Delta: 4.5°C (Control: 52.0°C vs Experiment: 47.5°C)
- Average Temperature Reduction: ~3.5°C throughout test
IRF540 MOSFET Sample 1 - 3rd Party Thermal Test
- Test Duration: 30 minutes
- Max Temperature Delta: 6.0°C at peak (Control: 34.9°C vs Experiment: 28.9°C)
- Key Observation: Experiment maintained significantly lower temperature throughout entire test period
IRF540 MOSFET Sample 2 - 3rd Party Thermal Test
- Test Duration: 30 minutes
- Max Temperature Delta: 6.5°C (Control: 34.9°C vs Experiment: 28.4°C)
- Consistency: Results closely match Sample 1, demonstrating repeatability