Raspberry Pi 4B - 98-Day Validation

Three Key Discoveries

Performance transformation: 317% increase in max clock time, 40.3% higher average frequency, 30% better thermal efficiency
Persistent effects: A single 30-minute RFO exposure maintained 33% performance gain after 98 days unpowered
Cumulative enhancement: Re-application of RFO builds on previous treatments, suggesting semi-permanent material changes (both tests at 2.1 GHz overclock)

40.3%

Performance increase

98 Days

Effect persistence

30%

Energy efficiency gain

Bottom line: RFO enables silicon to run faster, cooler, and more efficiently-with effects that last months without power.

I. Experimental Methodology & Timeline

After nearly two years of validating RFO effects on discrete semiconductors, we extended testing to a full computing platform. The Raspberry Pi 4B was chosen for its constrained thermal envelope and well-documented baseline performance.

Three-phase design:

Phase 1 (April 17): Initial 30-minute RFO exposure at stock 1.8 GHz to establish baseline effects
Phase 2 (July 24): Persistence test after 98 days unpowered-run at 2.1 GHz overclock, no new treatment
Phase 3 (July 24): Full RFO protocol with extended exposure and live treatment-run at 2.1 GHz overclock

All experiments used identical hardware, controlled ambient conditions, and standardized stress testing protocols to ensure reproducible results.

II. July 24, 2025 - Full Experimental Run

Protocol: 30 minutes focused SoC exposure + 90 minutes distributed component treatment + 10 minutes live field activation during stress test at 2.1 GHz.

317%

Max clock time increase

40.3%

Frequency improvement

30%

Thermal efficiency gain

34.6%

Throughput increase

Time at maximum clock (2.1 GHz): 2.1% → 8.6% (+317%)
Severe throttling: 69.1% → 28.0% (−59.5%)
Average frequency: 1,195 → 1,677 MHz (+40.3%)
Throttle delay: 16.2 → 57.0 s (+251.9%)
Computational throughput: 103,779 → 139,735 MHz·s (+34.6%)
Thermal efficiency: 75.2 → 52.8 °C/GHz (−29.8%)
Time >1.5 GHz: 30.9% → 72% (2.3×)
Peak temperature: −1.5 °C vs control despite higher sustained performance

Energy efficiency: computations per watt-second = 7.6 (control) vs 9.9 (RFO) → +30%.

Average frequency (MHz)

Time at 2.1 GHz (%)

Severe throttling (%)

Throttle delay (s)

Total work (MHz·s)

Thermal efficiency (MHz/°C)

Compute per watt-second

III. Persistence Discovery (98 Days)

The board retained a 33% performance improvement from a single 30-minute exposure 98 days prior, with no power or additional treatment in between-consistent with semi-permanent material changes.

IV. April 17, 2025 - Initial Validation at Stock Clock

61%

Throttling reduction

12.8%

Avg clock increase

68 s

Full-speed duration

Treated system throttled 28% vs 71% for control
Average clock: 1,687 vs 1,544 MHz (+12.8%)
Lower temperatures across the run while sustaining higher frequency

RPi 4B - April 17 clock speed over time (MHz).

RPi 4B - April 17 temperature over time (°C).

V. Scientific Interpretation

Immediate, measurable improvements; persistence for months; cumulative gains on re-application
Not explained by passive cooling or transient EMI; consistent with semi-permanent restructuring
Plausible mechanisms: field-aligned domain orientation, defect passivation, suppressed phonon scattering

VI. Closing

RFO reshapes the operating profile of silicon systems without firmware changes, heatsink mods, or continuous power. Performance becomes more stable. Efficiency improves. Effects last.