Discrete Components
Detailed analysis of RFO effects on individual semiconductor components including MOSFETs, BJTs, and voltage regulators.
MOSFET IRF540N - Temperature Over Time
Test conditions: 30 minutes exposure (out of circuit), 11 V with 470 Ω load resistor. Date: 2021‑03‑09.
Key Finding: RFO-treated MOSFET maintained consistently lower operating temperature throughout the test period
Peak Temperature Reduction: 3.2°C at 10 minutes
BJT 2N4401 - Temperature Over Time
Test conditions: Ambient 24.1 °C. Date: 2025‑03‑09.
Key Finding: RFO-treated BJT showed improved thermal stability with lower peak temperatures
Average Temperature Reduction: 2.1°C
Diode 1N4002 - Temperature Over Time
Test conditions: 30 min exposure, 11 V, 47 Ω load (ambient: 24.9 °C). Date: 2025‑03‑11.
Key Finding: RFO treatment resulted in more stable thermal profile with reduced temperature spikes
Thermal Stability: 15% reduction in temperature variance
2N4401 BJT - Post‑Exposure Thermal Test
Test conditions: 2N4401 exposed for 30 minutes two days prior. Date: 3/13.
Key Finding: RFO effects persisted for multiple days after initial exposure
Persistence: Thermal benefits maintained 48 hours post-treatment
2N4401 BJT - Voltage Measurements
Measurements at 5 minutes and Off state: VBC, VCE, VBE.
Key Finding: RFO-treated BJT exhibited improved voltage characteristics
Voltage Stability: Enhanced voltage retention across all measurement points
MOSFET IRF540 - Live Temperature & VDS
Test conditions: PSU 5 V, 1.3 A. Date: 3/25/05.
Key Finding: RFO treatment improved both thermal and electrical performance simultaneously
Dual Improvement: Lower temperature operation with enhanced VDS characteristics
IRF540 4.2V Test - Extended Analysis
VDS test at 4.2V with comprehensive thermal monitoring.
Key Finding: RFO effects scale with voltage, showing greater benefits at higher operating voltages
Voltage Scaling: Temperature reduction increased with applied voltage
IRFZ44N - Drain Current Analysis
Drain current measurements at various gate voltages.
Key Finding: RFO-treated MOSFET showed improved current characteristics
Current Efficiency: Enhanced current flow at lower gate voltages
7805 Voltage Regulator - Thermal Profile
Linear regulator temperature analysis under load conditions.
Key Finding: RFO treatment improved thermal efficiency of voltage regulation
Thermal Improvement: Consistent lower operating temperature throughout test period
Gate Threshold Voltage - MOSFET Analysis
Gate threshold voltage comparison between RFO-treated and control MOSFETs.
Key Finding: RFO-treated MOSFETs exhibited lower gate threshold voltage
Threshold Reduction: 2.4V vs 3.1V (22.6% improvement)
IRFZ44N - Thermal Persistence Test
35-day persistence test showing long-term RFO effects.
Key Finding: RFO effects persisted for 35 days without additional treatment
Long-term Stability: Thermal benefits maintained over extended period